Mosfet / Transistor
MRF6VP41KH 1000 Watt Mosfet
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 500 MHz. Devices are unmatched and…
Rp 2.500.000,00
RD70HVF1 70 Watt
DESCRIPTION RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. FEATURES High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz…
Rp 450.000,00
RD15HVF1
DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. FEATURES High power and High Gain: Pout>15W, Gp>14dB…
Rp 160.000,00
RD06HVF1
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V, f=175MHz APPLICATION For…
Rp 100.000,00
RD30HVF1 Power Transistor
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60&#xty;p.…
Rp 300.000,00
BLF861A UHF TV
Description: UHF power LDMOS transistor - Application: TV and UHF Communication transmitters ; Description: UHF LDMOS RF POWER Transistor ; Efficiency: 55 %; Frequency: 470…
Rp 1.750.000,00
BLF-578 1200 Watt
* Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100…
Rp 2.950.000,00
2SC1971
Barang Baru Ready Stock Silicon NPN Transistor RF Power Output The 2SC1971 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers…
Rp 100.000,00
2SC2782 100W VHF
A 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. VHF BAND POWER AMPLIFIER APPLICATIONS. Output Power…
Rp 1,00
2SC1946 30 Watt VHF
Barang Baru Ready Stock A silicon NPN epitaxial planer type transistor designed for RF power amplifiers High Power Gain: Gpe >/= 6,7dB (VCC = 13,5V,…
Rp 250.000,00