MRF6VP41KH 1000 Watt Mosfet

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA,…